Abstract
We study the electronic structure of ultrathin Al2O3, HfO2, and TiO2 ALD films by resonant photoelectron spectroscopy. We identify intrinsic defects which are responsible for the active sites in interface reactions, for the incorporation of intrinsic charges, and for the formation of local dipole momenta. All of these features determine the surface potentials and the reactivity of the surface of the atomic layer deposition coated systems. We give examples of charges and dipoles in Al2O3, on a study of the surface potentials in HfO2, and relate the intrinsic defects in TiO2 to their electrochemical relevance.
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