Abstract
One kind of super-hard a-CNx film was deposited on Si substrate by the ion-beam assist magnetron sputtering. A clear interfacial layer with homogeneous thickness was found in the as-deposited film. The a-CNx layer spontaneous spalled along the interfacial defect, which indicated a high internal stress, resulting in adhesion failure. After thermal treatment, the interfacial layer between Ti layer and Si substrate seem to present a coherent or semi-coherent type with some misfit at the Si/SiOx grain boundaries. This mismatch relaxed the strain of the interface defects, and the high internal stress of the film was induced with a 3–5 atom-thick strained layer on Si substrate.
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