Abstract
The improvement of anomalous Hall effect (AHE) has been obtained through the introduction of a Ta metallic layer at the Co/MgO interface in perpendicular [Pt/Co]3/MgO multilayers. It is exhibited that the saturation anomalous Hall resistivity is 42% larger than that in Co/Pt multilayers without Ta insertion. More meaningfully, thermally stable AHE feature is gained in perpendicular [Pt/Co]3/Ta/MgO multilayers despite Co-Pt interdiffusion. The AHE is enhanced for sample [Pt/Co]3/Ta/MgO after annealing, mainly due to the enhancement of the side-jump and intrinsic contributions.
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