Abstract
The effect of interfacial scattering on anisotropic magnetoresistance (AMR) and anomalous Hall effect (AHE) was studied in the (Ta12n/Fe36n)n multilayers, where the numbers give the thickness in nanometer and n is an integer from 1 to 12. The multilayer structure has been confirmed by the XRR spectra and STEM images of cross-sections. The magneto-transport properties were measured by four-point probe method in Hall bar shaped samples in the temperature range of 5 − 300 K. The AMR increases with n, which could be ascribed to the interfacial spin-orbit scattering. At 5 K, the longitudinal resistivity (ρxx) increases by 6.4 times and the anomalous Hall resistivity (ρAHE) increases by 49.4 times from n =1 to n =12, indicative of the interfacial scattering effect. The skew-scattering, side-jump and intrinsic contributions to the AHE were separated successfully. As n increases from 1 to 12, the intrinsic contribution decreases because of the decaying crystallinity or finite size effect and the intrinsic contribution dominated the AHE for all samples. The side jump changes from negative to positive because the interfacial scattering and intralayer scattering in Fe layers both contribute to side jump in the AHE but with opposite sign.
Highlights
The anomalous Hall effect (AHE) has been intensively studied in magnetic materials due to its controversial mechanisms[1,2,3,4,5,6] and promising applications.[7]
Since the AHE and anisotropic magnetoresistance (AMR) both are related to the spin-orbit coupling (SOC) and Au has relatively smaller SOC comparing to Ta, we prepared Ta/Fe multilayers which have the same structure with that of Fe/Au multilayers[11] to study the interfacial scattering effect on the AMR and the AHE
In our previous work,[11] interfacial scattering resulted in AMR in Fe/Au multilayers due to the SOC of Au layers
Summary
The anomalous Hall effect (AHE) has been intensively studied in magnetic materials due to its controversial mechanisms[1,2,3,4,5,6] and promising applications.[7] It is generally accepted that the intrinsic and extrinsic mechanisms, related to spin-orbit coupling (SOC), are responsible for the AHE. The extrinsic mechanisms, arising from impurity scattering, include two contributions, skew scattering[5] and side jump.[6] Theories suggested the scaling relations[2,5,6] between anomalous Hall resistivity (ρAHE) and longitudinal resistivity (ρxx) for each mechanism: ρAHE ∝ ρ2xx for both the intrinsic and extrinsic side-jump mechanism, while ρAHE ∝ ρxx for extrinsic skew-scattering mechanism. Since the AHE and AMR both are related to the SOC and Au has relatively smaller SOC comparing to Ta, we prepared Ta/Fe multilayers which have the same structure with that of Fe/Au multilayers[11] to study the interfacial scattering effect on the AMR and the AHE
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