Abstract
The photoluminescence (PL) spectrum of modulation‐doped GaAs/AlGaAs quantum wells (MDQW) and heterojunctions (HJ) is studied under a magnetic field Bi, applied parallel to the two‐dimensional electron gas (2DEG) layer. The effect of Bi strongly depends on the electron‐hole separation deh, and we revealed remarkable Bi‐induced modifications of the PL spectra in both types of heterostructures. A model is developed, considering the direct optical transitions between the conduction and valence subbands that are shifted in k‐space under Bi. It accounts qualitatively for the observed PL spectral variations with Bi.
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