Spin-splitting of the subbands of InGaAs-InP and other `no common atom' quantum wells

Abstract

In this article we calculate the effect of the native interface asymmetry on the band structure of `no common atom' quantum wells such as (InGa)As-InP. We show that it leads to a new contribution to the spin-splitting in both the valence and conduction subbands. The splitting appears to be anisotropic and at least one order of magnitude larger in the valence subbands than in the conduction subbands.