Optical-absorption spectra associated with impurities in a GaAs-(Ga,Al)As quantum well

Abstract

The optical-absorption spectra associated with transitions between the n=1 valence subband and the donor-impurity band and between the acceptor-impurity band and the n=1 conduction subband were calculated for both the infinite and the finite GaAs-${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Al}}_{\mathrm{x}}$As quantum wells. An absorption edge associated with transitions involving impurities at the center of the well and a peak related with impurities at the edges of the well were the main features observed in the theoretical spectra. Results obtained in the case of an infinite quantum well were rather different from those previously reported in the literature.