Abstract
AbstractThe nonresonant interband Faraday rotation in silicon single crystals was measured in the spectral region 0.55 to 3.1 eV. A new modulation method is developed for measuring rotations of the plane of polarization of linearly polarized radiation to an accuracy of better than 0.001° in normal cases. The range of measurements was extended up to 2 eV above the indirect energy gap with sample thicknesses between 1 mm and 1 μm, at temperatures between 100 and 350 K, and in a magnetic field of 2 T. The Faraday rotation increases monotonously in the whole range up to a photon energy of 3.1 eV. As the analysis by means of theoretical dispersion functions, of the dispersion relation known as Becquerel equation, and the temperature dependence shows, the interband Faraday rotation in silicon is only associated with direct transitions, the band gap of which should be between 3.2 and 3.4 eV and is not below 3.1 eV.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call