Abstract
AbstractInterband Faraday rotation has been measured in Si up to the first reversal in sign at 3.33 eV photon energy corresponding to the beginning of direct transitions at the zone centre. The direct gap is found to be (3.33 ± 0.02) eV at 300 K. The samples, very thin, self‐supporting films (d ≧ 0.1 μm), were obtained from epitaxial Si wafers. Faraday ellipticity as well as rotation has been measured to an accuracy of ≦ 10−5 using polarization modulation, which corresponds to a hundred percent magnetic field modulation. Faraday ellipticity, measured below 2.3 eV, is only associated with indirect transitions. But the Faraday rotation due to these indirect transitions calculated from ellipticity according to the Kramers‐Kronig relationship is at the maximum 2% of the total rotation. The influence of the direct and indirect transitions is discussed.
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