Abstract

Conducting polymers appear very attractive as sensor materials either as the gas-sensitive component or as a matrix for easy immobilization of a specific substrate. The planar Schottky barrier diode with poly(3-octylthiophene), P3OT, as the semiconductor is used as a sensor for the detection of different gas species. The shifts in the current-voltage ( C-V) characteristics as well as the C-V characteristics of the diodes due to water and ethanol vapour, ammonia gas and nitric oxide gases are studied. Nitric oxide and ammonia give the largest and most specific changes of the C-V characteristics. Nitric oxide has a doping effect, which increases the reverse current, while ammonia is the only gas that causes a negative change in the forward bias current of the I-V curve. The planar configuration of the Schottky barrier diode facilitates the absorption of gaseous species in the environment, and provides a simple method for production of gas sensor.

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