Abstract

We report on the circuit modeling and analysis of a planar rectangular anode Schottky barrier diode "T-anode" to predict multiplier performance using these devices and to optimize their design. A rectangular anode Schottky barrier diode model, including saturation effect, has been developed and implemented in Hewlett Packard's Microwave Design System (MDS). This model, based on the diode geometry and semiconductor wafer structure, is used to optimize physical parameters such as the doping, epilayer thickness and anode size and shape in order to obtain maximum conversion efficiency. Different multiplier configurations (single and multiple diode doubler and quadrupler) to 640 GHz are analyzed and compared.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.