Abstract
We report on the optical activation of Eu-doped KTiOAsO4 (KTA) by ion implantation and the effect on luminescence activity during lattice recovery. Optical activation of KTA crystals implanted with 400 keV Eu ions at an ion fluence of 5 × 1015 ions/cm2 is investigated. Despite a high damage level induced by the implantation, doping of Eu into KTA results in a strong photoluminescence in the temperature range from 4 K to 300 K, the strongest peak appears at 612 nm, which corresponding to the 5D0-7F2 transition. The lattice strain and Raman spectroscopy of the implanted KTA before and after annealing at 600°C and 700°C showed that the lattice defects are effectively recovered under annealing. Furthermore, the lattice damage effect on photoluminescence of ion-implanted Eu-doped KTA is negligible, indicating that ion implantation is an important method to obtain intense photoluminescence. The results reveal the optical activation properties of Eu implanted KTA and the attractiveness of its applications in waveguide quantum reservoirs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.