Abstract
A generalized Density Gradient model has been implemented into the device simulator Dessis [DESSIS 7.0 reference manual (2001). ISE Integrated Systems Engineering AG, Balgriststrasse 102, CH‐8008 Zürich].We describe the multidimensional discretization scheme used and discuss our modifications to the standard Density Gradient model. The evaluation of the model shows good agreement to results obtained by the Schro¨dinger equation.
Highlights
Today’s microelectronic devices are so small that quantum mechanical effects are important
We describe a discretization scheme for the Density Gradient Model suitable for multidimensional devices which fulfills all the aforementioned requirements to be used in day-to-day industrial device simulation
We introduce a model modification which allows to use of the Density Gradient model in parts of the device where the density is unknown
Summary
Today’s microelectronic devices are so small that quantum mechanical effects are important. The Density Gradient model and similar models [5 –9] take an intermediate position between heuristic and full quantum mechanical descriptions They are able to predict both the terminal characteristics and the density distribution in the device. They are formulated in terms of partial differential equations and tractable with the numerical methods commonly used for classical device simulation. Our implementation of the Density Gradient model aims at providing a useful tool for industrial users of device simulation. To meet this goal, numerical robustness, efficiency, accuracy, and ease of use have high priority, which demands a high quality discretization scheme.
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