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https://doi.org/10.1109/edm.2017.7981729
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Cite Publication Date: Jun 1, 2017 |
 Citations: 3 |
This paper is devoted to an analysis of modern cryogenic low noise amplifier designs in integrated implementation. An analytical comparison between two modern semiconductor technologies InP HEMT η SiGe HBT, used for design and manufacture of cryogenic low noise amplifiers with advanced low noise parameters is presented is presented.
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