Abstract
In this article we elucidate the design and fabrication of a P-band cryogenic low noise amplifier (CLNA) with built-in limiter circuit, and further studied the characteristics of PIN diode limiter at different temperature. Measurements at 75 K shows the P-band CLNA with build-in limiter has a good performance with noise figure lower than 0.5 dB, the input and output voltage standing wave ratio (VSWR) less than 1.5 and input 1 dB power compression point −4 dBm within the band width 300 MHz. The variation of the gain within ±0.1 dB under the impact of 20 dBm input power level signals. In addition, the maximum allowed input power of the CLNA has increased from 13 dBm to 22 dBm.
Published Version
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