Integrated Half-Bridge Switch Using 70-  $\mu\hbox{m}$-Thin Devices and Hollow Interconnects

Adane Kassa Solomon,Jianfeng Li,Alberto Castellazzi,C Mark Johnson

doi:10.1109/tia.2014.2334734

Integrated Half-Bridge Switch Using 70- $\mu\hbox{m}$-Thin Devices and Hollow Interconnects

Adane Kassa Solomon, Jianfeng Li + Show 2 more

Open Access

https://doi.org/10.1109/tia.2014.2334734

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Abstract

An application-oriented integration concept for a half-bridge switch assembly has been developed based on the latest generation 70- $\mu\hbox{m}$ -thin insulated gate bipolar transistors and diodes, which are rated at 600 V/200 A. This paper addresses the design and reliability of the assembly, with a fully bondwireless approach using cylindrical copper bumps. Advanced numerical structural simulation techniques are also applied to assess the influence of interconnect characteristics (material, size, and shape) and try to determine an optimum solution for reducing the stress and creep strain development in the solder joint. Preliminary experimental tests of the power module are also carried out at different switching frequency and loads to prove the validity of the proposed solution in terms of electromagnetic performance.

Highlights

21 bridge switch (HBS) based on last generation 70-μm22 thin 600-V/200-A insulated-gate bipolar transistors (IGBTs) and diodes; in particular, it advances the state of the art as regards a recently presented packaging concept, which targets the optimization from an application point of view [1]
Here, the main focus is on developing interconnect solutions, which can improve the thermomechanical performance of the assembled switch during fabrication and operation, preventing the benefits of thin device technology from being penalized at the packaging level
Paper 2013-PEDCC-710.R1, presented at the 2012 IEEE Energy Conversion Congress and Exposition, Raleigh, NC, USA, September 15–20, and approved for publication in the IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS by the Power Electronic Devices and Components Committee the other, by means of interconnect posts, as shown in 77 Fig. 2. This results in a low stray inductance and double-sided cooled power switch, where all devices have their backside in of the IEEE Industry Applications Society

Summary

Integrated Half-Bridge Switch Using 70-μm-Thin

Adane Kassa Solomon, Jianfeng Li, Alberto Castellazzi, and C. This paper addresses the 8 design and reliability of the assembly, with a fully bondwireless low-side basic switches, but rather the positive and negative. 10 structural simulation techniques are applied to assess the and the low-side transistor/high-side diode pairs, respectively influence of interconnect characteristics (material, size, and shape) and try to determine an optimum solution for reducing the stress and creep strain development in the solder joint. (the terminology positive and negative cell is derived from the sign of the load current during inverter operation). Based on these considerations, this paper presents an advanced and application-driven integration approach of a half-bridge power switch. To construct with post (power bump) bondwireless sandwich packaging technology, which enables high power density levels, 53

INTRODUCTION

SWITCH ASSEMBLY

FE MODELING AND SIMULATION

SWITCH PROTOTYPE AND PRELIMINARY

Findings

CONCLUSION