Abstract
The surface reaction triggered by pulsed laser irradiation in chemical beam epitaxy (CBE) for GaP growth using triethylgallium (TEGa) and PH 3 was investigated with reflection high-energy electron diffraction (RHEED). The intensity of RHEED showed an abrupt decrease on laser irradiation followed by gradual recovery. The RHEED intensity recovered faster with a higher PH 3 flow rate, which indicates that the intensity recovery is related with the surface reaction between Ga atoms generated by laser irradiation and P atoms. This result showed that the decomposition of TEGa by laser irradiation and the formation of GaP occur alternately under continuous supply of source gases.
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