Reflection high-energy electron diffraction observation of surface reaction triggered by pulsed laser irradiation during GaP growth in chemical beam epitaxy

Abstract

Surface reaction triggered by pulsed laser irradiation in chemical beam epitaxy (CBE) for GaP growth using triethylgallium (TEGa) and PH3 was studied with reflection high-energy electron diffraction (RHEED). The intensity of RHEED showed an abrupt decrease on the irradiating laser followed by gradual recovery, and this change of intensity was different from that in usual CBE growth. The intensity recovery had considerable dependence on the PH3 flow rate, which indicates that the intensity recovery is related to the surface reaction between Ga atoms generated by laser irradiation and P atoms. This result showed that the decomposition of TEGa by laser irradiation and the formation of GaP occur alternately under continuous supply of source gases.