Abstract
The underlying mechanism causing tail bits in data retention for high resistance state (HRS) of vacancy-modulated conductive oxide resistive RAM, consisting of TiN/amorphous-Si/TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /TiN structure, was investigated. The tail bits observed in the small size cells with large On/Off ratio were attributed to the current fluctuations in time. The mechanism, in which the current fluctuation is caused by the fragility of the conduction path in a high resistive region determining the cell current in TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> , was clarified by retention measurement with various conditions of On/Off ratio and cell size. It was found that the total number of defects in the high resistive region is the key to ensure a steady HRS conduction. We, furthermore, demonstrated a way to suppress the tail bits in the small size cells (40 ×40 nm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) even with large On/Off ratio (×10 ) by process tuning of TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> film fabrication.
Published Version
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