Abstract
Improved performance in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by incorporating Ba into insulator/SiC interfaces was investigated by using a combination of the Hall effect and split capacitance-voltage measurements. It was found that a moderate annealing temperature causes negligible metal-enhanced oxidation, which is rather beneficial for increments in field-effect mobility (μFE) of the FETs together with suppressed surface roughness of the gate oxides. The combined method revealed that, while severe μFE degradation in SiC-MOSFETs is caused by a reduction of effective mobile carriers due to carrier trapping at the SiO2/SiC interfaces, Ba incorporation into the interface significantly increases mobile carrier density with greater impact than the widely-used nitrided interfaces.
Highlights
Insight into enhanced field-effect mobility of 4H-Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) with Ba incorporation studied by Hall effect measurements
Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements
Interface nitridation with high-temperature annealing in a nitric oxide (NO) ambience is widely used for fabricating stateof-the-art commercial SiC-MOSFETs
Summary
Insight into enhanced field-effect mobility of 4H-SiC MOSFET with Ba incorporation studied by Hall effect measurements.
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