Abstract
The in-plane magnetic anisotropy was studied for a quaternary alloy ferromagnetic semiconductor [(InyGa1-y)1-xMnx]As thin film with x=0.12 and y=0.54 grown on an InP(001) substrate using planar Hall effect measurements. The present [(In0.54Ga0.46)0.88Mn0.12]As thin film shows a large planar Hall effect resistance change of 210 Ω at 2.8 K. It was found that the film has strong in-plane uniaxial magnetic anisotropy (Ku:K1>100:1) at 2.8 K, and its easy magnetization axis is along the [110] direction in the whole temperature range below its Curie temperature (< 100 K). This strong in-plane uniaxial magnetic anisotropy as well as the large planer Hall effect will be a potential advantage for spin-electronic devices.
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