Abstract
InP/GaAsSb double heterojunction bipolar transistors (DHBTs) may be an attractive alternative to InP/InGaAs DHBTs, since estimates of the band alignment indicate that it is ideal for fabricating n-p-n DHBTs. We have demonstrated the first organometallic chemical vapor deposition grown InP/GaAsSb DHBTs, with carbon-doped bases having an ft and fmax of 30 and 45 GHz, respectively.
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