Abstract
Techniques for the synthesis of InP at the equilibrium vapor pressure of the melt via gradient freeze, and the reproducible growth of twin-free crystals by LEC are discussed. In addition, an in-situ post-growth annealing procedure for twin-free LEC crystals, which minimizes the effects of growth induced stress and that resulting from differential thermal contraction between the InP crystal and the B 2O 3 skin adhering to it after growth, is reported.
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