Abstract
Major improvements in the structural and electrical perfection of single crystals of III-V compound semiconductors have been achieved by using new vertical Bridgman-type and vertical gradient freeze techniques. A general review of experimental set-ups used for growth of large diameter crystals of GaP, InP and GaAs is presented. Crystals properties and characteristic features are discussed to illustrate advantages and disadvantages of the vertical Bridgman-type growth techniques.
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