Some aspects of the recent work on InP crystal growth in China

Abstract

InP synthesis and LEC growth of single crystals in China is reviewed. Three methods have been adopted in InP synthesis from the starting elements, namely direct synthesis inside the puller, vapor stream stirring method and conventional gradient freeze technique. InP twin-free crystals, 300–1000 g (30–60 mm diameter × 100–150 mm length) can be routinely grown using LEC technique. The quality of these crystals meet requirements for device fabrication.