Abstract
The growth of InP crystals from the melt is discussed on the basis of new data on the pTx relations for the In/P system in the vicinity of stoichiometric InP. The preparation of nominally undoped n-type material by the gradient-freeze technique with visual control of the seeding process is described. Zn- and Cd-doped p-type crystals were prepared in a modified almost-isothermal apparatus in order to obtain uniform stoichiometry and regular dopant distribution. The crystals were characterized in terms of their chemical purity, dopant distribution, physical defects and electrical properties.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
