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Abstract
Fabrication processes to make an excellent p+n-junction on bulk n-InP by 24Mg-ion implantation are described. The leakage-current density through a junction was less than 10-7 A/cm2 with a rectification ratio larger than 106 at a bias voltage of - 1 V and a junction breakdown voltage below - 60 V without any guardring structure. A 2.0-mm long junction waveguide was used to control the long-wavelength (λ=1.135 µm) light with an extinction of 8.6 dB at 10 V.
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