Performance analysis of InGaAs/InP avalanche photodiode by using different guard ring structures

Abstract

Avalanche Photodiode based on InGaAs/InP was chosen because of the needs of high speed optical receivers and have their own advantages on high sensitivity. In this project, we focused on the effect of guard ring on InGaAs/InP avalanche photodiodes and its performance. Three types of guard ring structures are designed in APD and their current-voltage (I-V) characteristics (electric field profiles) are simulated and analyzed. In this paper, the characteristics of guard ring in InGaAs/InP are investigated using Silvaco software, TCAD tools. This paper investigates the effects of guard-ring (GR) structures on the performance of InGaAs/InP avalanche photodiode (APDs) designed in Silvaco TCAD. Three type InGaAs/InP-APDs based on P+/N-well guard ring, n+/p-substrate guard ring and no presence guard ring are designed and their electric field profiles are simulated. In others to know the best structures of InGaAs/InP avalanche photodiode structures, the current-voltage characteristics (I-V characteristics) are measured and compared. Overall, the project includes the effect and relationship of avalanche photodiode between substrate concentrations and doping, type of materials, with the breakdown voltage and leakage current were investigated. Then, the structure is applied with guard ring structure. At the end, we choose the best optimized design of avalanche photodiode based on current-voltage characteristics. From the theoretical, they conclude the important of guard ring presence in the avalanche photodiode structure in order to avoid premature breakdown and also leakage current. From the experiment, we can conclude that the best structures of InGaAs/InP avalanche photodiode is by using P+/N-well guard ring because this structure give the higher breakdown voltage and lowest leakage current.