Abstract

Avalanche Photodiode based on InGaAs/InP was chosen because of the needs of high-speed optical receivers and have their own advantages on high sensitivity. In this project, we focused on the effect of guard ring on InGaAs/InP avalanche photodiodes and its performance. Two types of guard ring structures are designed in APD and their current-voltage (I-V) characteristics (electric field profiles) are simulated and analysed. This paper investigates the effects of guard-ring (GR) structures on the performance of InGaAs/InP avalanche photodiodes (APDs). Two type InGaAs/InP-APDs based on P+/N-well guard ring and n+/p-substrate guard ring are designed and their electric field profiles are simulated and analyzed. Current current-voltage characteristics (I-V characteristics) are measured and compared.

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