InP growth on ion-implanted InP substrate: a new method to achieve selective area MOVPE

Abstract

A novel method for selective area MOVPE of InP on ion-implanted InP substrate has been developed. The substrate is partially masked by photoresist, which protects the underlying surface from modification by ion implantation. On these areas the InP growth is single crystalline while a more polycrystalline phase is deposited on the implanted areas. Depending on the TMIn partial pressure, the growth rate of the single crystalline material is enhanced compared to the polycrystalline phase, which leads to selective growth at a low TMIn partial pressure and to phase selective growth at high partial pressures. The carrier mobility and the specific resistance of the polycrystalline material was found to be higher than in single crystalline InP. The ratio of the mobility in polycrystalline to the mobility in single crystalline InP depends on the growth temperature. The influence of the growth parameters, total reactor pressure, TMIn partial pressure, growth temperature and time, and the influence of the geometric dimensions was investigated. This technique should allow the growth of small structures at short distances like matrices of quantum dots or quantum wires.