Abstract
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. The InGaAs/InP DHBTs were grown by MBE and fabricated using conventional process techniques. Devices with an emitter junction area of 4.8μm 2 exhibited peak cutoff frequency (f T ) and maximum oscillation frequency (f MAX ) values of 265 and 305 GHz, respectively, and a breakdown voltage (BV CEo ) of over 5 V. Using this technology, a set of mixed-signal IC building blocks for > 80Gbit/s fibre optical links, including distributed amplifiers (DA), voltage controlled oscillators (VCO), and multiplexers (MUX), have been successfully fabricated and operated at 80 Gbit/s and beyond.
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