Abstract
An InGaAs/InP DHBT with InGaAsP composite collector is designed and fabricated using triple mesa structure and planarization technology. All processes are on 3-inch wafers. The DHBT with emitter area of 0.5×5μm2 exhibits a current cutoff frequency f t =350GHz and a maximum oscillation frequency f max =532GHz which is to our knowledge the highest BV CEO ever reported for InGaAs/InP DHBTs in China. The breakdown voltage is 4.8V. The high speed InGaAs/InP DHBTs with high breakdown voltage are promising for voltage controlled oscillator (VCO) and mixer applications at THz span.
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