InN/GaN SQW and DH structures grown by radio frequency plasma‐assisted MBE

Abstract

We studied the fabrication of InN/GaN single-quantum well (SQW) and double hetero (DH) structures by the radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE) system with in-situ monitoring of spectroscopic ellipsometry (SE) and reflection high-energy electron diffraction (RHEED). By using this system, we could monitor and control the epitaxial growth front in real time and succeeded in growing the SQW and/or DH structures whose well layer thickness ranged from 5 nm to 40 nm. In the photoluminescence measurements at 13 K, single emission peak was observed in the range from 1.55 µm to 1.7 µm depending on the well layer thickness. The observed blue shift was ascribed to the quantum effect of InN/GaN SQW. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)