Abstract
GaInN single layers were investigated in order to optimise their photoluminescence properties and to find dependencies on the main growth parameters such as growth temperature, In/(In+Ga) gas phase ratio and total pressure. Several approaches for capping GaInN/GaN with another GaN layer in order to develop high quality double-hetero (DH) structures were presented. Using an optimised interfacing technique we obtain device quality DH structures with state of the art composition uniformity across a 2″ wafer. Further investigation of these DH structures results in high quality single quantum well (SQW) and multi quantum well (MQW) structures.
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