Abstract
Switching polarization processes and the recharge of film traps in (Ba, Sr)TiO3 on silicon substrate have been investigated. It was shown that the bending direction of bands in the silicon substrate is determined by the remanent polarization, only after the influence of comparatively weak electrical fields, which are insufficient for saturation of film polarization. Strong fields, which influence the bending of bands was defined by the trap charge, which was of opposite sign and exceeded the remanent polarization charge. All the complex data concerning the dependence of the trap charge on external voltage pulse amplitude and duration and also on its relaxation of time is presented. For experimental data interpretation a model is proposed, which takes into account the presence of a transition layer between the film and substrate, and also the film nonlinearity. The possibility of usage of formed structures as a mass-memory device with density greater than 107 bits/cm2 was shown. The maximum density was estimated at 1-10Gbits/cm2.
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