Abstract
Excess carrier dynamics was investigated by free-carrier absorption and light-induced transient grating techniques in InN layers with residual electron density varying from n0=1.4×1018 to 4.7×1018 cm-3 in a wide excitation range (up to 1020 cm-3). Carrier lifetime τ decreased with injected carrier density ΔN≥n0 and followed the same inverse relationship as on residual electron density τ∝[B(n0+ΔN)]-1, thus confirming defect-related recombination mechanism. Its nonradiative origin was verified by τ(T) measurements and ascribed to injection-enhanced nonlinear recombination via defect-assisted Auger recombination with CTAAR= B/NT=(4.5±2)×10-28 cm6/s, assuming the defect density NT being equal to electron density. Oxygen or hydrogen impurities are proposed as possible candidates for traps assisting in Auger process.
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