Injected carrier lifetimes and double-injection currents in semiconductors with a single impurity level

Abstract

Theoretical analyses of the lifetimes of injected electrons and holes, and the double-injection currents in long p-i-n diodes with a single impurity level, are treated by evaluating the space-charge density formed by the injection of the minority carrier lifetimes and the current-voltage characteristics are obtained in a low- and a high-injection regime, and approximately in an intermediate-injection regime, when the physical parameters of the i region and the dependence of the equilibrium majority-carrier density upon temperature have been measured beforehand.