Abstract
The epitaxial growth mechanisms for GaP on Si substrates using the metalorganic chemical vapor deposition method are described in this paper. The initial growth mode changes from island to layer type with increasing V III ratio or gas pressure. The stress, the lattice deformation and the defect structure for GaP on Si substrates grown under high V III ratio are characterized by varying the GaP thickness. The structure of the antiphase domain in GaP on Si with various misorientation angles is described. The growth conditions to obtain a low dislocation density GaP-on-Si with smooth surface morphology are presented.
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