Abstract
The initial electrical properties of tantalum oxide resistive memory were investigated using four metal electrodes (TiN, Ti, Ta, and Al) and two kinds of tantalum oxide with different amounts of intrinsic oxygen vacancies. The initial resistance depended on the electrode material. This indicated that oxygen scavenging by the electrodes contributed to a reduction in the resistance. However, the resistance change depended on the intrinsic oxygen vacancy concentration introduced during the tantalum oxide deposition. The forming voltage also depended on the electrode metal. For the device with an Al electrode, a clear aluminum oxide layer was identified at the electrode–insulator interface, which was hypothesized to be the origin of the high forming voltage. All factors concerning the oxygen vacancies, i.e. intrinsic vacancies introduced via film deposition and extrinsic vacancies caused by the electrode scavenging effect, influenced the initial state of tantalum oxide, and thus, its switching performance as a resistive memory.
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