Abstract
In this work, low-temperature photoluminescence (PL) and photoluminescence excitation (PLE)experiments have been carried out to investigate the optical and electronic properties of InAs/GaAsquantum dots (QDs) subjected to room-temperature proton implantation at various doses(5 × 1010–1014 ions cm−2) and subsequent thermal annealing. The energy shift of the main QD emission band isfound to increase with increasing implantation dose. Our measurements show clearevidence of an inhomogeneous In/Ga intermixing at low proton implantation doses(≤5 × 1011 ions cm−2), giving rise to the coexistence of intermixed and non-intermixed QDs. For higherimplantation doses, a decrease of both the PL linewidth and the intersublevel spacingenergy have been found to occur, suggesting that the dot-size, dot-composition anddot-strain distributions evolve towards more uniform ones.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
