Abstract
InGaN multiple quantum well (MQW) laser diodes were fabricated on a 6H–SiC substrate using low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). Both threshold current and slope efficiency were improved by changing the MQW structure from five 2.5nm wells to three 4nm wells. The anomalously large improvement in slope efficiency suggested the presence of inhomogeneous hole injection. The use of high-reflection (HR) coating also reduced the threshold current. A threshold current of 500mA was obtained as the minimum value under pulsed current injection at room temperature, corresponding to a threshold current density of 12kA/cm2. The maximum pulse duration of 1.5μs was obtained under 1kHz repetition frequency. The number of lasing emission lines increased as the current increased above the threshold.
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