Abstract
Waveguide InGaAs/InAlAs avalanche photodiodes (APDs) with high bandwidths (>40 GHz) and low dark current ( $k ~ \sim ~ 0.2$ line in the local excess noise model. Using these values bit error rate (BER) was calculated to assess the potential of our APDs. Calculated sensitivities of −21.5 dBm at 25 Gb/s and −14.2 dBm at 40 Gb/s are predicted for a BER of $10^{-10}$ . Analysis showed that with lower amplifier noise, the low dark current and low excess noise from our APDs are necessary to optimize the sensitivity.
Highlights
H IGH speed photodiodes are in demand to respond to the ever increasing internet traffic within Ethernet and long haul backbone optical networks
Our largest W-avalanche photodiodes (APDs) with an area of 4 × 50 μm2 still exhibits a reasonably low value of 50 nA at 90% of the breakdown voltage
The dark current prior to the breakdown voltage is similar and is independent of the device geometry suggesting that it is not related to a bulk mechanism
Summary
H IGH speed photodiodes are in demand to respond to the ever increasing internet traffic within Ethernet and long haul backbone optical networks. APDs need to exhibit low dark current, high responsivity both at 1310 and 1550 nm, and low excess avalanche noise factor F.
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