Abstract
We report a 20-layer InxGa1−xAs∕In0.52Al0.24Ga0.24As quantum wire infrared photodetector grown on (001)-axis InP substrate by molecular beam epitaxy. High density InGaAs quantum wires were formed, utilizing the strained-induced lateral-layer ordering process by growing a strain-balanced (GaAs)1.80∕(InAs)2.35 short-period superlattice. This device shows a unique polarized photoresponse which favors the normal-incident infrared radiation polarizing perpendicular to the wire orientation. The photoresponse at 6.3μm exhibited a peak detectivity of 3.13×109cmHz1∕2∕W at 10K.
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