Abstract
An InGaAs/InAlAs five-layer asymmetric coupled quantum well (FACQW) exhibiting a giant electrorefractive index change was proposed and has been studied theoretically and experimentally. Giant electrorefractive sensitivity |dn/dF| (4.4×10-4 cm/kV) at a wavelength range with a width of over 100 nm can be expected at an electric field of approximately F=-30 to -60 kV/cm. The FACQW structure was successfully fabricated using molecular beam epitaxy (MBE). The results of photoabsorption current measurements are consistent with the theory. The giant electrorefractive index change of the FACQW is very promising for realizing low-voltage and high-speed compact Mach–Zehnder modulators and switches.
Published Version
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