Abstract
To investigate the mechanisms of carbon enhanced vapor etching of silicon oxide, electron‐beam‐induced reactions in stearic acid Langmuir–Blodgett (LB) films were studied as a model system. Stearic acid LB films were deposited on silicon, and characterized using multiple internal reflection infrared spectroscopy. Spectra of these films exposed to an electron beam show changes in both peak shape and intensity. The changes are shown to result from both electron‐beam‐induced evaporation, and from carbon–carbon bond dissociation within the films.
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