Abstract
p–n junctions in ternary Hg1−xMnxTe and quaternary Hg1−x−yCdxMnyTe semimagnetic semiconducting alloys with energy band gaps from 100 to 770 meV were produced by the Hg diffusion method. Current–voltage curves, differential resistivity, and spectral characteristics were measured in the temperature range from 4.2 to 300 K. Material and technological parameters on the electric and photoelectric properties of p–n junctions were analyzed.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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