Abstract
p-n junctions in epitaxial graded-gap CdxHg1−xTe layers were produced by the Hg-diffusion method, with molar compositions x from 0.18 to 1. Current-voltage, differential resistivity and capacity characteristics were measured as function of bias in the temperature range 4.2–300 K. Carrier transport mechanisms are discussed, including both generation-recombination and tunnelling processes in the junction. The dependence of electric and photoelectric properties of p-n junctions on both the physical and technological parameters of epitaxial CdxHg1−xTe layers are also analysed.
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