Abstract
In this paper, we report the infrared absorption and opto-electrical characteristics of multilayered thin films of MoSi2/SiNx with a micro-bridge structure. The thin films of MoSi2 deposited by radio frequency magnetron sputtering exhibit a relatively smooth surface (RMS roughness <1 nm, ∼0.98 Å/s), on which their square resistance is linearly increased from 340 to 550 Ω/sq. as the thickness decreases from 32 to 16 nm. Fourier transform infrared spectroscopy analysis indicates that the thin film MoSi2 with a thickness of ∼24 nm (450 Ω/sq.) presents the maximum infrared absorption on nearly dielectric thin film SiNx. Optical simulation verifies that the resistivity of the nearly dielectric thin film SiNx has an important influence on the infrared absorption of the thin film MoSi2. This work provides the physical understanding regarding the building of micro-bridges with the high infrared absorption.
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