Abstract
Silicon on insulator (SOI) structures have been formed by nitrogen or oxygen implantation with a dose of 1.8 × 10 18 ions/cm 2 at 190–200 keV. Infrared (IR) absorption and reflection spectra in the wavenumber range 400–5000 cm −1 were measured for SOI structures after various thermal anneal treatments. Localized vibrational modes and interference fringes were observed in the IR spectra. By IR absorption and thermodynamic analysis, it was found that crystalline α-Si 3N 4 was formed in the buried nitride layer of SOI structure after annealing at 1200°C for 2 h. However, the buried layer formed by oxygen implantation was still amorphous SiO 2 after annealing at 1300°C for 5 h. By detailed theoretical analysis and computer simulation of the IR reflection interference spectra, refractive index profiles of SOI structures were obtained.
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