Thermal recrystallization of silicon amorphous layers after argon, oxygen and nitrogen ion implantation

Abstract

Abstract The dose dependences of the structure state in (111) and (001)-Si wafers were studied by transmission electron diffraction and electron microscopy techniques after argon, nitrogen and oxygen ion implantation and high temperature annealing. The critical doses for forming twins and polycrystalline layers, which depend on the orientation, were shown to be attained for all types of ions. The critical dose values increase in the succession Ar, N, O. A model which relates the observed phenomena to the chemical nature of the implanted impurity and explains the structure differences of the implantation layers at high impurity concentrations is presented.